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FQPF6N80C

Manufacturer:

On Semiconductor

Mfr.Part #:

FQPF6N80C

Datasheet:
Description:

MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 51 W 800 V Continuous Drain Current (ID):5.5 A 30 nC

ParameterValue
Voltage Rating (DC)800 V
Length10.16 mm
Width4.7 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance2.5 Ω
Height9.19 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Current Rating5.5 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation51 W
Power Dissipation51 W
Threshold Voltage5 V
Number of Channels1
Input capacitance1.31 nF
Continuous Drain Current (ID)5.5 A
Rds On Max2.5 Ω
Drain to Source Voltage (Vdss)800 V
Turn-On Delay Time26 ns
Turn-Off Delay Time47 ns
Element ConfigurationSingle
Fall Time44 ns
Rise Time65 ns
Gate Charge30 nC
Drain to Source Resistance2.5 Ω
Gate to Source Voltage (Vgs)30 V
Drain to Source Breakdown Voltage (Vds)800 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Gate to Source Threshold Voltage3 V
FET Type(Transistor Polarity)N-Channel

Stock: 133

Distributors
pcbx
Unit Price$1.91414
Ext.Price$1.91414
QtyUnit PriceExt.Price
1$1.91414$1.91414
10$1.60435$16.04350
25$1.50513$37.62825
50$1.41206$70.60300
100$1.22657$122.65700
300$1.18050$354.15000
500$1.13616$568.08000
1000$1.09756$1097.56000